BGA 729N6 E6327

BGA729N6 Broadband Low Noise Amplifier for Portable and Mobile TV Applications Data Sheet Revision 3.0, 2015-11-18 RF & Protection Devices Edition 2015-11-18 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA729N6 Revision History Page or Item Subjects (major changes since previous revision) Revision 3.0, 2015-11-18 9 Maximum ratings updated (Maximum value for voltage at pin AO) 10 Input return loss updated Revision 2.0, 2015-09-30 7 Marking updated 7, 8, 10 Electrical performance updated 11 Bill of materials updated 12 Marking layout drawing updated Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 3.0, 2015-11-18 BGA729N6 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Data Sheet 4 Revision 3.0, 2015-11-18 BGA729N6 List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Data Sheet Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application Schematic BGA729N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 TSNP-6-2 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Footprint Recommendation TSNP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 13 5 Revision 3.0, 2015-11-18 BGA729N6 List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Data Sheet Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Gain Mode Selection Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics: TA = 25 °C, VCC = VPON = 2.8 V, VGS = 0 / 2.8 V, f = 70 - 1000 MHz . . . 10 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision 3.0, 2015-11-18 Broadband Low Noise Amplifier for Portable and Mobile TV Applications BGA729N6 Features • • • • • • • • • • • • • • • Insertion power gain: 16.3 dB Insertion Loss in bypass mode: 4.2 dB Low noise figure: 1.05 dB / 4.3 dB in high gain / bypass mode Low current consumption: 6.3 mA Power off function Operating frequency: 70 - 1000 MHz Three-state control: OFF-, bypass- and high gain-Mode Supply voltage: 1.5 V to 3.3 V Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) B7HF Silicon Germanium technology No external matching inductor required RF input and output internally matched to 50 Ω Only 2 external SMD component necessary 2 kV HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package Product Name Marking Package BGA729N6 M TSNP-6-2 Data Sheet 7 Revision 3.0, 2015-11-18 BGA729N6 Features VCC PON GS AI AO ESD GND BGA729N6_Blockdiagram.vsd Figure 1 Block Diagram Description The BGA729N6 is a broadband low power low noise amplifier (LNA) MMIC for portable and mobile TV applications which covers a wide frequency range from 70 MHz to 1000 MHz. The LNA provides 16.3 dB gain and 1.05 dB noise figure at a current consumption of 6.3 mA in the application configuration described in Chapter 3. In bypass mode the LNA provides an insertion loss of 4.2 dB. The bypass mode with much higher linearity enables this LNA to work with much lower current consumption than commonly used TV LNAs. The BGA729N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GS High gain / bypass mode control 2 VCC DC supply 3 AO LNA output 4 GND Ground 5 AI LNA input 6 PON Power on / off control Gain Mode Selection Truth Table Table 2 Gain Mode Selection Truth Table Control Voltage VPON Control Voltage VGS Gain Mode High Low High Gain High High Bypass Low High Bypass Low Low OFF Data Sheet 8 Revision 3.0, 2015-11-18 BGA729N6 Maximum Ratings 1 Maximum Ratings Table 3 Maximum Ratings 1) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Voltage at pin VCC VCC -0.3 – 3.6 V – Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at pin PON VPON -0.3 – VCC + 0.3 V – Voltage at pin GS VGS -0.3 – VCC + 0.3 V – Voltage at GND pins VGND -0.3 – 0.3 V – Current into pin VCC ICC – – 16 mA – RF input power PIN – – +2 dBm – Total power dissipation, Ptot – – 60 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -65 – 150 °C – ESD capability all pins VESD_HBM – – 2000 V according to JESD22A-114 TS < tbd. °C2) 1) All voltages refer to GND-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 3.0, 2015-11-18 BGA729N6 Electrical Characteristics 2 Electrical Characteristics Table 4 Electrical Characteristics:1) TA = 25 °C, VCC = VPON = 2.8 V, VGS = 0 / 2.8 V, f = 70 - 1000 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.3 V – Supply current ICC – 6.3 – mA High gain mode – 0.55 – mA Bypass mode – 0.2 5 μA OFF-mode Current into PON pin IPON – 10 – µA High gain mode Current into GS pin IGS – 60 – µA Bypass mode – 16.3 – dB High gain mode – -4.2 – dB Bypass mode – 1.05 – dB High gain mode – 4.3 – dB Bypass mode – 10 – dB High gain mode – 15 – dB Bypass mode – 17 – dB High gain mode – 13 – dB Bypass mode – 28 – dB High gain mode – 4.2 – dB Bypass mode – 4 – μs OFF- to ON-mode Inband input 1dB-compression IP1dB point, f = 470 MHz – -15 – dBm High gain mode – +6 – dBm Bypass mode Inband input 3rd-order intercept IIP3 point4) f1 = 470 MHz , f2 = f1 + 1 MHz – -6 – dBm High gain mode – +20 – dBm Bypass mode Stability – >1 – 2 Insertion power gain f = 470 MHz Noise figure ZS = 50 Ω |S21| 2) NF Input return loss f = 470 MHz RLin Output return loss f = 470 MHz RLout 2 Reverse isolation 1/|S12| 3) Power gain settling time 1) 2) 3) 4) tS k f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted To be within 1 dB of the final gain High gain mode: Input power = -30 dBm for each tone / Bypass mode: Input power = -10 dBm for each tone Data Sheet 10 Revision 3.0, 2015-11-18 BGA729N6 Application Information 3 Application Information Application Board Configuration N1 BGA729N6 C2 RFout AO, 3 GND, 4 C1 RFin PON VCC VCC, 2 AI, 5 GS, 1 PON, 6 C3 (optional) GS BGA729N6_Schematic.vsd Figure 2 Application Schematic BGA729N6 Table 5 Bill of Materials Name Value Package Manufacturer Function C1 1 nF 0402 Various DC block 1) C2 1 nF 0402 Various DC block 1) C3 (optional) ≥ 1 nF 0402 Various RF bypass 2) N1 BGA729N6 TSNP-6-2 Infineon SiGe LNA 1) DC block might be necessary due to internal LNA bias voltage @ AI (LNA Analog Input pin). The DC block can be realized with pre-filter (e.g. SAW) 2) RF bypass recommended to mitigate power supply noise Note: No external DC blocking capacitor at RFout is required in typical applications as long as no DC is applied. A list of all application notes is available at http://www.infineon.com/ltelna Data Sheet 11 Revision 3.0, 2015-11-18 BGA729N6 Package Information Package Information Bottom view +0.025 0.375 -0.015 0.7 ±0.05 0.02 MAX. 0.2 ±0.05 1) 0.8 ±0.05 3 4 2 1.1 ±0.05 Top view 0.2 ±0.05 1) 4 5 1 6 0.4 ±0.05 Pin 1 marking 1) Dimension applies to plated terminals Figure 3 TSNP-6-2-PO V01 TSNP-6-2 Package Outline (top, side and bottom views) NSMD 0.4 0.4 0.25 0.25 0.4 0.4 0.25 0.25 (stencil thickness 100 µm) Copper Stencil apertures Solder mask TSNP-6-2-FP V01 Figure 4 Footprint Recommendation TSNP-6-2 TSNP-6-2-MK.vsd Figure 5 Data Sheet Marking Layout (top view) 12 Revision 3.0, 2015-11-18 BGA729N6 Package Information 1.25 Pin 1 marking 8 0.5 2 0.85 TSNP-6-2-TP V01 Figure 6 Data Sheet Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) 13 Revision 3.0, 2015-11-18 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG